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IRFBE30L Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: I2PAK
- Description: MOSFET N-CH 800V 4.1A I2PAK
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IRFBE30L Specifications:
- MfrPart.: IRFBE30L
- Mfr: Vishay Siliconix
- Description: MOSFET N-CH 800V 4.1A I2PAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: -
- PartStatus: Obsolete
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 800 V
- Current-ContinuousDrain(Id)@25°C: 4.1A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 3Ohm @ 2.5A, 10V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 78 nC @ 10 V
- Vgs(Max): ±20V
- InputCapacitance(Ciss)(Max)@Vds: 1300 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 125W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: I2PAK
- IRFBE30L Vishay, MOSFET N-CH 800V 4.1A I2PAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IRFBE30L, Vishay authentic parts in stock from Vishay authorized distributors, order today, can ship immediately.
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