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SISS63DN-T1-GE3 Images
- Manufacturer: Vishay
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerPAK® 1212-8S
- Description: MOSFET P-CH 20V 35.1/127.5A PPAK
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SISS63DN-T1-GE3 Specifications:
- MfrPart.: SISS63DN-T1-GE3
- Mfr: Vishay Siliconix
- Description: MOSFET P-CH 20V 35.1/127.5A PPAK
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: TrenchFET® Gen III
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 35.1A (Ta), 127.5A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10V
- RdsOn(Max)@IdVgs: 2.7mOhm @ 15A, 10V
- Vgs(th)(Max)@Id: 1.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 236 nC @ 8 V
- Vgs(Max): ±12V
- InputCapacitance(Ciss)(Max)@Vds: 7080 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): 5W (Ta), 65.8W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerPAK® 1212-8S
- SISS63DN-T1-GE3 Vishay, MOSFET P-CH 20V 35.1/127.5A PPAK, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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